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| MUBW 15-12 A7 Converter - Brake - Inverter Module (CBI2) 21 D11 1 D12 D13 2 D14 D15 7 3 D16 14 23 24 8 NTC T7 22 D7 T1 16 15 6 T2 11 10 D2 12 D1 T3 18 17 T4 D3 T5 20 19 T6 13 D5 5 D4 4 D6 9 Three Phase Rectifier VRRM = 1600V IDAVM = 36 A IFSM = 300 A Brake Chopper VCES = 1200 V IC25 = 20 A VCE(sat) = 2.3 V Three Phase Inverter VCES = 1200 V IC25 = 35 A VCE(sat) = 2.1 V Application: AC motor drives with q Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM Ptot TC = 80C; sine 180 TC = 80C; rectangular; d = 1/3 TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C Conditions Maximum Ratings 1600 25 24 300 100 V A A A W q q Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation Features q q q Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.3 1.3 1.2 1 1.6 0.15 V V mA mA s 1.3 K/W q VF IR trr RthJC IF = 15 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C VR = 100 V; IF = 15 A; di/dt = -15 A/s (per diode) q q High level of integration - only one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. (c) 2001 IXYS All rights reserved 1-8 105 MUBW 15-12 A7 Output Inverter T1 - T6 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25C to 150C Continuous Transient TC = 25C TC = 80C VGE = 15 V; RG = 82 ; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 82 ; TVJ = 125C non-repetitive TC = 25C Maximum Ratings 1200 20 30 35 25 ICM = 35 VCEK VCES 10 180 V V V A A A s W Equivalent Circuits for Simulation Conduction D11 - D16 Rectifier Diode (typ. at TJ = 125C) V0 = 1.08 V; R0 = 15 m T1 - T6 / D1 - D6 IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.37 V; R0 = 62 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.32 V; R0 = 30 m T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.32 V; R0 = 131 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.39 V; R0 = 56 m Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.1 2.3 4.5 0.9 200 100 70 500 70 2.3 1.8 1000 70 2.6 6.5 0.9 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.7 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 15 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Thermal Response Inductive load, TVJ = 125C VCE = 600 V; IC = 15 A VGE = 15 V; RG = 82 D11 - D16 Rectifier Diode (typ.) Cth1 = 0.106 J/K; Rth1 = 1.06 K/W Cth2 = 0.79 J/K; Rth2 = 0.239 K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.545 K/W Cth2 = 1.162 J/K; Rth2 = 0.155 K/W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 15 A (per IGBT) Output Inverter D1 - D6 Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 28 18 A A Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 1.758 K/W Cth2 = 0.639 J/K; Rth2 = 0.342 K/W T7 / D7 Symbol VF IRM trr RthJC Conditions IF = 15 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.7 1.8 16 130 V V A ns 2.1 K/W IGBT (typ.) Cth1 = 0.09 J/K; Rth1 = 0.954 K/W Cth2 = 0.809 J/K; Rth2 = 0.246 K/W Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W (c) 2001 IXYS All rights reserved 2-8 MUBW 15-12 A7 Brake Chopper T7 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol Conditions TVJ = 25C to 150C Continuous Transient TC = 25C TC = 80C VGE = 15 V; RG = 82 ; TVJ = 125C Clamped inductive load; L = 100 H Maximum Ratings 1200 20 30 20 15 ICM = 20 VCEK VCES 10 105 V V V A A A s W VCE = 720 V; VGE = 15 V; RG = 82 ; TVJ = 125C non-repetitive TC = 25C Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.3 2.7 4.5 0.3 200 50 40 290 60 1.2 1.1 600 45 2.7 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.2 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 10 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 10 A VGE = 15 V; RG = 82 VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600 V; VGE = 15 V; IC = 10 A Brake Chopper D7 Symbol VRRM IF25 IF80 Symbol VF IR IRM trr RthJC (c) 2001 IXYS All rights reserved Conditions TVJ = 25C to 150C TC = 25C TC = 80C Conditions IF = 10 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C IF = 10 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V Maximum Ratings 1200 17 11 V A A Characteristic Values min. typ. max. 2.9 1.9 0.06 0.07 13 110 V V mA mA A ns 3.2 K/W 3-8 MUBW 15-12 A7 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Dimensions in mm (1 mm = 0.0394") Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 Conditions Operating Maximum Ratings -40...+125 150 -40...+125 2500 2.7 - 3.3 C C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Characteristic Values min. typ. max. 5 m mm mm K/W g (c) 2001 IXYS All rights reserved 4-8 MUBW 15-12 A7 Input Rectifier Bridge D11 - D16 50 A 40 IF 30 TVJ= 125C TVJ= 25C 60 102 20 40 TVJ= 150C TVJ= 150C TVJ= 45C 100 50Hz, 80% VRRM A 80 IFSM TVJ= 45C I2t 103 A2s 10 20 0 0.0 0.4 0.8 1.2 VF 1.6 V 2.0 0 0.001 101 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t Fig. 1 Forward current versus voltage drop per diode 500 W 400 Ptot 300 Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 60 A 50 Id(AV) 40 200 RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W 30 20 100 10 0 0 20 40 60 80 Id(AV)M A 0 20 40 60 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC Fig. 4 1 1.6 K/W 1.2 ZthJC Power dissipation versus direct output current and ambient temperature, sin 8 0 Fig. 5 Max. forward current versus case temperature 0.8 0.4 0.0 0.001 DWF N9-16 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case (c) 2001 IXYS All rights reserved 5-8 MUBW 15-12 A7 Output Inverter T1 - T6 / D1 - D6 50 A 40 VGE = 17V 15V 13V 11V 50 A 40 30 11V VGE = 17V 15V 13V IC IC 30 20 10 0 0 1 2 3 4 VCE 20 10 0 9V TVJ = 125C 9V TVJ = 25C 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics 50 A 40 IC 50 40 A 30 TVJ = 125C TVJ = 25C IF 30 20 TVJ = 125C TVJ = 25C 20 10 VCE = 20V 10 0 4 6 8 10 12 VGE 0 14 V 16 0 1 2 VF 3 V 4 Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 50 trr 20 V $ ns & TVJ = 125C VR = 600V IF = 15A MUBW1512A7 15 VGE 40 A IRM trr 30 10 20 5 VCE = 600V IC = 15A 10 IRM " 0 0 20 40 60 80 nC QG 0 100 0 200 400 600 800 A/s -di/dt 1000 Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of free wheeling diode (c) 2001 IXYS All rights reserved 6-8 MUBW 15-12 A7 Output Inverter T1 - T6 / D1 - D6 6 mJ Eon Jd(on) 120 ns 80 Jr t Eoff 6 mJ Jd(off) Eoff 600 ns 400 t 4 VCE = 600V VGE = 15V RG = 82 TVJ = 125C 4 VCE = 600V VGE = 15V RG = 82 TVJ = 125C 2 Eon 40 2 200 Jf 0 0 10 20 IC 0 0 0 10 20 IC 30 A 0 30 A Fig. 13 Typ. turn on energy and switching times versus collector current 3 mJ Eon 150 ns 100 Jr VCE = 600V VGE = 15V IC = 15A TVJ = 125C Fig. 14 Typ. turn off energy and switching times versus collector current 2.0 mJ Eoff Jd(off) 800 ns 600 t Eon Jd(on) 2 t Eoff 1.5 1.0 50 VCE = 600V VGE = 15V IC = 15A TVJ = 125C 400 1 0.5 200 Jf 0 0 20 40 60 80 100 RG 0 120 140 0.0 0 20 40 60 80 100 RG 0 120 140 Fig. 15 Typ. turn on energy and switching times versus gate resistor 40 A ICM 10 K/W ZthJC 1 Fig.16 Typ. turn off energy and switching times versus gate resistor diode 30 IGBT 0.1 20 0.01 10 RG = 82 TVJ = 125C single pulse 0.001 0.0001 0.00001 0.0001 0.001 MUBW1512A7 0 0 200 400 600 800 1000 1200 1400 V VCE 0.01 0.1 t 1 s 10 Fig. 17 Reverse biased safe operating area RBSOA Fig. 18 Typ. transient thermal impedance (c) 2001 IXYS All rights reserved 7-8 MUBW 15-12 A7 Brake Chopper T7 / D7 30 A 25 IC IF 30 A 25 20 TVJ = 25C TVJ = 125C TVJ = 125C TVJ = 25C 20 15 10 5 VGE = 15V 15 10 5 0 0 0 1 2 3 4 VCE 5 V6 0 1 2 VF 3 V 4 Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of free wheeling diode 500 2.5 mJ Eoff 2.0 VCE = 600V VGE = 15V RG = 82 TVJ = 125C 1.2 mJ t Eoff Eoff Jd(off) VCE = 600V VGE = 15V IC = 10A TVJ = 125C 600 ns t 400 ns 400 Jd(off) 300 200 0.8 1.5 1.0 0.5 0.0 0 4 8 Eoff Jf 0.4 100 200 Jf 0 A 20 0.0 0 20 40 60 80 100 12 IC 16 0 120 140 RG Fig. 21 Typ. turn off energy and switching times versus collector current 10 K/W 1 ZthJC 0.1 R 0.01 0.001 single pulse diode IGBT Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 10000 1000 0.0001 0.00001 0.0001 0.001 100 0.01 0.1 t 1 s 10 0 25 50 75 100 T MUBW1512A7 125 C 150 Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus temperature (c) 2001 IXYS All rights reserved 8-8 |
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